Smoltek has been granted a new patent that improves the capacitance density of the company's CNF-MIM capacitors
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Smoltek has been granted a new patent that improves the capacitance density of the company's CNF-MIM capacitors

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This press release is an English version of the previously published Swedish version, which has interpretive precedence.

Smoltek Nanotech Holding AB (publ) (“Smoltek” or “the Company”) announces that the company has received a new patent – marking the beginning of a new patent family called Multilayer Cap. The novel innovation introduces a MIM-capacitor device that can double or triple the capacitance density of the company’s CNF-MIM capacitors. This patent is considered important both for Smoltek’s business and technological advancement.

This newly granted patent is the first one in a new patent family called Multilayer Cap and details an invention for a layered energy storage device, e.g. a capacitor, built using a metal-insulator-metal (MIM) configuration.

“Capacitance density is one of the most important KPIs of our CNF-MIM capacitor technology. In this new patent, we propose a technique that doubles or triples the capacitance density through an innovating multi-layer structure.”, says Farzan Ghavanini, CTO at Smotek. 

The invention relates to metal-insulator-metal (MIM) electrostatic and/or electrochemical energy storage devices, including capacitors and batteries. It introduces a method for creating a carbon nanofiber (CNF) based, multilayer MIM structure, where electrodes and dielectrics are sequentially layered. This innovative approach of stacking conductor-insulator layers is developed to increase the capacitance density and hence is considered important for Smoltek business and technology.

The patent application actually includes two independent claims: A device claim, which outlines the stacked multilayer capacitor structure having alternating conductor-insulator layers. And a method claim which details the fabrication process of such device using conformal coating on the CNFs.

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